Advanced GaN chip solutio
Product Center
Developing large-scale analog integrated chips around compound semiconductor materials, including SDR SiP chips, mini LEDs, and third-generation semiconductor gallium nitride GaN and SiC power devices that have obtained dozens of invention patents.
RF CHIP
RF chips are the core components of mobile intelligent terminal products, and the pursuit of low power consumption, high performance, and low cost is the main driving force for their technological upgrades. After the company launched multiple RF front-end devices on a large scale in the market, they received unanimous praise from customers, mainly including transceivers and RF front-end components such as power amplifiers (PA), antenna switches (Switch), filters (Filter), duplexers and duplexers, and low-noise amplifiers (LNA).
GaN & SiC
A low impedance, high electron mobility device solution designed based on gallium nitride (GaN) and silicon carbide (SiC) compound semiconductor materials, customized with various modules and devices for customers, mainly used in photovoltaic inverters, motor control, new energy vehicles, wireless charging, medium and low voltage fast charging, etc.
AI DS
The GaN high electron transfer programmable power system chip based on artificial intelligence big model architecture has won multiple second and third prizes in ICCV International Artificial Intelligence Competition for three consecutive years, and won the CVPR championship at the International Computer Vision Tactile Summit in 2024.
Mini LED
The Mini LED display driver chip integrates high-precision constant current control, PWM generation, and digital signal processing components, and is the main part of the display imaging system. It is responsible for receiving image data and converting it into PWM constant current drive, accurately controlling the corresponding LED grayscale display. The company currently has large-scale 8K Mini LED display high refresh rate chips and matrix LED backlight driver chips designed based on CPWM technology. This technology field has obtained more than 60% of domestic invention patents.
Micro LED
Micro LED， By miniaturizing and matrixizing the LED backlight source, we are committed to driving inorganic spontaneous components (self luminous) separately to extend product lifespan. The length of Micro LED chips is about 1-10 μ m, which is only 1% of that of LEDs. Through large-scale transfer technology, μ m level three color RGB Micro LEDs are transferred to substrates to form Micro LED display screens of various sizes.
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About Us
Zhongke Wireless Semiconductor Co., Ltd., founded by a team of alumni from the University of Science and Technology of China, has many years of experience in the research and industrialization of compound power semiconductors. It is a high-end analog chip design company based on the research and production of compound materials.
Company Overview
Zhongke Wireless Semiconductor Co., Ltd., abbreviated as "Zhongke Semiconductor", was founded in Hefei in 2011 and moved to Shenzhen, Guangdong in 2018. It is a military civilian integration enterprise founded by a team of alumni from the University of Science and Technology of China. It is composed of expert doctoral supervisors in the field of "third-generation semiconductor" analog chip design, including 7 professors and 11 PhDs. It has obtained 43 national defense and civil patents and has published a total of 250 papers. The team comes from the major military industrial institutes and the Semiconductor Research Institute of the Chinese Academy of Sciences, and has rich experience in compound power semiconductor research and development and industrialization. The chips developed include HEMT, PHEMT, GaN/SiC, Transceiver communication chips mini LED、micro LED、 Development of compound semiconductor epitaxial materials and development of sapphire substrate technology for growing aluminum oxide (AI2O3) materials. The product is mainly used in fields such as new energy, drones, unmanned equipment, Internet of Things, display panels, and fast charging.
Read detailDevelopment history
In 2023, gallium arsenide/gallium nitride HEMT/PHEMT, GaN epitaxy will enter the mass production stage; In 2023, the MiniLED 8-channel chip was verified to be qualified; Develop 48 channel chips; In 2022, SiP process design and mass production of IoT chips and SiP packaging machine image SOC+RFTransceiver will be achieved; Developing photonic microwave connectors in 2019.
Read detailCompany honors
The company is qualified as a national high-tech enterprise and a national software enterprise. Obtained 100 patents, 9 software copyrights, police probes, transparent algorithm encryption systems, etc., and received government funding (5 million yuan). Awarded as a member of the China Semiconductor Alliance and a partner of Huawei's 4G Smart Antenna and China Mobile's 5G Joint Innovation Center.
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