PHEMT
RF chip is the core component of mobile intelligent terminal products. The pursuit of low power consumption, high performance and low cost is the main driving force for its technology upgrading, mainly including transceiver and RF front-end [such as power amplifier (PA), antenna switch, filter, duplexer and diplexer, low noise amplifier (LNA)].
HEMT
A high current "power brick" power device designed based on gallium nitride (GaN) and silicon carbide (SiC), mainly used in photovoltaic inverters, motor control, new energy vehicles, wireless charging, medium and low voltage fast charging.
AI dynamical-system
Mainly using GaN high electronic transfer programmable power system chips based on artificial intelligence large model architecture, as well as solutions for unmanned aerial vehicles, robot visual tactile sensing, and edge artificial intelligence algorithms. The company's research team has won multiple second and third prizes in the ICCV International Artificial Intelligence Competition for three consecutive years, and won the CVPR championship at the International Computer Vision Tactile Summit in 2024.
Mini LED
The Mini LED display driver chip integrates high-precision constant current control, PWM generation, and digital signal processing components, and is the main part of the display screen imaging system. It is responsible for receiving image data and converting it into PWM constant current drive, accurately controlling the corresponding LED grayscale display. The company currently has large-scale 8K Mini LED display high refresh chips and matrix LED backlight driver chips designed based on CPWM technology. There are also full-color ultra-high brightness LED epitaxy and LED chips.
Micro LED
Micro LED, By miniaturizing and matrixizing LED backlight sources, we are committed to driving inorganic self emission (self emission) separately and extending product lifespan. The length of the Maicro LED chip is about 1-10 μ m, which is only 1% of that of LED. Through large-scale transfer technology, we have achieved μ m level three color RGB Micro LEDs are transferred onto substrates to form various sizes of Micro LED display screens.

RF CHIP

CT6011

Intelligent Bluetooth voice chip

40 pin QFN 5x5500KB Flash,

64KB RAM

BLE 4.2



 
CT9002B系列

13 × 15 × 2.1mm

Interface: SDIO3.0 × 1

(5.8G or 2.4G RF)

UART × 1 (GNSS/BT)



 
CT9004B系列

17×17×2.1mm 

TXPOWER: 23dbm~30.5dbm

(Optional)

Frequency band: 2.3GHz~6GHz



 
CT9012

Satellite CHIP


Sub-6GRFTransceiver

The working frequency band covers 300MHz~6000MHz

Signal processing bandwidth supports up to 200MHz

Supports 4T4RX2FB channels, supports FDD and TDD communication,

Internally integrated 2 * LO, 16bit 1474.56MspsADC,

16bit2949.12MspsDAC

Low noise Mixer, 204B/C high-speed digital interface.



 
CT-4020

Beidou Second Generation (BDS2)

Integrated navigation and positioning single chip

3.3VSupply; QFN-364.5mm × 4.5mm

Supports various satellite systems such as BDS, GPS, GLONASS, etc



 
CT-6GP33

Frequency: 2GHz~6GHz; Power: 33dBm

Voltage: 28V; Gain: 22dB; Current: 0.65A;

Size: 7.8 × four point eight × 3mm

Support LNA_ EN, PA_ EN, Vc1



 
CT-6GP37

Frequency: 2GHz~6GHz; Power: 37dBm

Voltage: 28V; Gain: 22dB; Current: 0.65A;

Size: 7.8 × four point eight × 3mm

Support LNA_ EN, PA_ EN, Vc1



 
CT661

Frequency: 2GHz~6GHz; Power: 45dBm

Voltage: 28V; Gain: 21dB Current: 3.5A;

Size: 7.8 × four point eight × 3mm

Support LNA_ EN, PA_ EN, Vc1



 
CT761

Sub 1G 6W PA

Packaging: QFN8x8-56

BW：300-550MHz

Gain (dB)：  37@433MHz



 
CT80D-01

Size: 13 x 15 x 2.1mm

TX POWER=33 dBm

Communication delay less than 5ms

RF bandwidth: 1/2/4/8 MHz


 
CT-9005 series

Size: 13 x 15 x 2.1mm

Transmission rate: 2Mbps, 4Mbps, 500Kbps, 100Kbps

Sensitivity: 5.8G: -91dbm @ 4Mbps, -93dbm@2Mbps ；

Sub1G:  -88dbm@2Mbps ,-96dbm @500Kbps



 
CT-83005

CT-83005 is a high-efficiency, DPD friendly, three-stage HBT universal power amplifier with operating frequencies ranging from 5100MHz to 5925MHz. Under typical 5V power supply conditions, the average output power can reach 28dBm and the peak power can reach 36dBm. The internal input and output impedance of the chip has been matched to 50 Ω, with on-chip power amplifier enable controller and temperature compensation circuit. Adopting advanced packaging, it has the characteristics of low cost and high reliability. Widely used in various high transmission rate application scenarios.


 
CT-83059

CT-83059 is a linear power amplifier with an operating frequency of 4900MHz~5925MHz, using a typical 5V operating voltage and a static current of 215mA. The input and output impedances inside the chip have been matched to 50 Ω. Adopting standard green lead-free advanced packaging, it has the characteristics of low cost and high reliability. Widely used in various high transmission rate application scenarios.