RMC
Released the world's first dedicated cerebellar chip solution that constrains AI model physical quantity outputs, with perception → decision → execution delay under 5ms, high-frequency neural reflexes exceeding 250Hz, and motion control models winning second and third prizes at the ICCV International AI Competition, and the CVPR International AI Vision and Tactile Championship in 2024.
Agt-ACT
The intelligent joint chip is equipped with a built-in FOC algorithm, using motor field-oriented control technology implemented through analog circuits. It has no operating system and operates at temperatures below 170°C. We achieved integration of 5,000 HEMT devices on a GaN two-dimensional electron device, with an operating temperature below 250°C. The joint motor driver chip integrates six HEMTs on a single chip, offering higher efficiency and smaller size.
RDP
Gallium Nitride (GaN) low-impedance, high electron mobility gallium integrated circuit 'digital power chip solution,' with built-in high-precision SOC, SOH, SOP AI electron mobility estimation algorithms. It is mainly used in aerospace, space robotics, smart equipment, digital inverters, new energy vehicles, new energy battery BMS management, safe charging, and other scenarios.
RDL
Gallium Nitride (GaN) millimeter-wave and millimeter-wave high electron mobility (PHEMT) amplifier and Transceiver chip solutions, mainly used in applications such as drones, robots, intelligent equipment, air-to-ground communication, space networking, and electronic countermeasures in complex electromagnetic environments.

RDP

CT3003A

8mm × 8mm × 0.85mm

48 channel high-precision constant current source output

1-4 sweep high current

PWM/PAM LED



 
CT3003B

5mm × 5mm × 0.4mm

32 high-precision constant current source outputs

PWM/PAM LED

QFN40L



 
CT-3002

LEDDisplay high refresh rate

PWMLED display driver

1-64 scan 16 common positive outputs



 
CT1M010

Gallium nitride transistor

100V GaN switching transistor

Mainly used for motor drive



 
CT1901

650V E-MODE GaN HEMT

DFN 5mm x 6mm

Enhanced silicon-based GaN power transistor

Ultra high switching frequency



 
CT1005

SOP8 4.9mm x 3.9mm

High performance PWM controller

Used for fast charging chargers,

Battery charger and adapter power supply



 
CT2102

High performance synchronous rectification power switch

Integrated 60V N channel power MOS

Combined with CT1005,

Used for fast charging of PD 20W mobile phones



 
CT2103

High performance synchronous rectification power switch

Integrated 100V N-channel power MOS

Combined with CT1005,

Used for fast charging of PD 30W mobile phones



 
CT1001

PSR ACDC CHIP 

SOP8: 4.9mm x 3.9mm

Suitable for low-power AC/DC offline SMPS



 
CT3005A

32 line scan 48 channel high-performance row and column integration

Package: BGA-100, 8 x 8 x 1.1mm

Working voltage: 3.3V~5.5V



 
CT10B30V100

· Bidirectional blocking ability

· GaN E-type HEMT technology

· Ultra low on resistance


 
CT3601
The CT3601 is an analog front-end chip with high-precision lithium battery monitoring and all-round safety protection, and low-side NMOS charge/discharge tube drive control, which is suitable for a variety of battery pack applications such as 10-17 strings of ternary lithium or lithium iron phosphate.
 
CT3901
The CT3901 is designed to drive 40V~150V VGaNTM, E-type bidirectional GaN HEMT with a single gate and dual drain for low-voltage side battery protection in BMS systems. With its powerful driving capabilities, the CT3901 can drive multiple VGaNTMs in parallel within 50uSec. The input of the CT3901 is compatible with AFE/MCU logic and can withstand input logic voltages up to 20V. CT3901 is a dedicated driver for CT-UNITE 40V~150V VGaNTM with a gate drive voltage of 5V. The CT3901 has fast opening and closing speeds that respond to fault conditions to protect the system.
 
CT3603

CT3603 is a multi battery monitor that can measure up to 18 batteries connected in series, with a total measurement error (TME) of less than 3.0 mV. The wide battery measurement range ranges from 0V to 5.5V, making the device suitable for most battery chemistries such as NCM, LFP, sodium ion, and lead-acid batteries. All 18 units can be measured within 329 µ s, and a lower data acquisition rate can be selected to achieve higher noise reduction effect.


 
CT1007

CT1007 is a high-performance PWM controller designed for isolated flyback ACDC switching power supplies. CT1007 integrates boost power supply mode and forward power supply mode, achieving wide output voltage at low cost.


 
CT1020

CT1020 is a high-efficiency valley switch PFC controller and configurable LLC current mode controller. PFC operation and quasi resonant (QR) valley switch mode improve work efficiency. The highly integrated CT1020 makes the LLC power supply have a very small number of components and a simple design.


 
CT1003

CT1003 is a high-performance PWM controller applied to isolated flyback ACDC switching power supplies. The chip integrates GaN high electron mobility power switching transistor. CT1003 also integrates into boost and forward power supply modes, achieving wide output voltage at low cost.


 
CT3902

CT3902 is a 100V half bridge driver designed to efficiently drive high side and low side gallium nitride (GaN) field-effect transistors (FETs), customizable to address common challenges in traditional MOSFET driver solutions.


 
CT20B15V100

100V bidirectional GaN enhanced HEMT. The gate terminal G and terminals D1/D2 both have a breakdown voltage of 100V and an operating current of 200A. GaN HEMT can be turned on by VGD1 voltage or VGD2 voltage.