AIPS
We have released the world's first FPGA (AI ASIC) and programmable gallium nitride (GaN) array driver for the "embodied robot power system chip", "edge AI physical posture model", and "robot visual touch" artificial intelligence software solution. We have obtained multiple invention patents and our research team has won multiple second and third prizes in the ICCV International Artificial Intelligence Competition for three consecutive years. In 2024, we won the CVPR championship at the International Computer Vision Touch Summit.
GaN
Low, medium, and high voltage power devices and large-scale GaN array driver chips designed based on gallium nitride (GaN) materials are mainly used in fields such as embodied robots, intelligent equipment, drones, photovoltaic inverters, motor control, new energy vehicles, and medium and low voltage fast charging.
RF CHIP
RF chip is the core component of mobile intelligent terminal products, and the pursuit of low power consumption, high performance, and low cost is the main driving force for its technological upgrade. It mainly includes transceiver and RF front-end [such as power amplifier (PA), antenna switch (Switch), filter, duplexer and duplexer, and low-noise amplifier (LNA), etc.].
New Display
The MiniLED display driver chip integrates high-precision constant current control, built-in advanced AM digital driver, PWM generation, and digital signal processor modules, and is the main part of the display imaging system. The 8K MiniLED display high refresh CPWM technology chip and matrix LED backlight driver chip developed by the company have obtained 30 invention patent authorizations for a single chip. The ultimate adaptive driving circuit precisely and evenly controls the imaging system to achieve better DCR, effectively reproducing different color levels with precision, making DCR dynamics more intuitive for visual enjoyment.

AIPS

CT9002B系列

13 × 15 × 2.1mm

Interface: SDIO3.0 × 1

(5.8G or 2.4G RF)

UART × 1 (GNSS/BT)



 
CT-9004A

17mm × 17mm × 2.1mm

Interface: SDIO3.0 × 1; UART × 1;



 
CT9004B系列

17×17×2.1mm 

TXPOWER: 23dbm~30.5dbm

(Optional)

Frequency band: 2.3GHz~6GHz



 
CT80D-01

Size: 13 x 15 x 2.1mm

TX POWER=33 dBm

Communication delay less than 5ms

RF bandwidth: 1/2/4/8 MHz


 
CT-9005 series

Size: 13 x 15 x 2.1mm

Transmission rate: 2Mbps, 4Mbps, 500Kbps, 100Kbps

Sensitivity: 5.8G: -91dbm @ 4Mbps, -93dbm@2Mbps ；

Sub1G:  -88dbm@2Mbps ,-96dbm @500Kbps



 
CT-1902

5mm×6.5mm LGA-30pin

2 x GaN HEMT+1 x Half Bridge Driver

Suitable for lightweight application scenarios



 
CT-1904

8mm×8mm LGA-15pin

6×GaN HEMT 

Suitable for cost sensitive consumer electronics devices



 
CT-1906

10mm×10mm LGA-16pin

6 x GaN HEMT+3 x Half Bridge Driver

Suitable for robot joint drive and new energy equipment

High power density scenarios such as industrial servo systems



 
CT10B030

· Bidirectional blocking ability

· GaN E-type HEMT technology

· Ultra low on resistance


 
CT3601
The CT3601 is an analog front-end chip with high-precision lithium battery monitoring and all-round safety protection, and low-side NMOS charge/discharge tube drive control, which is suitable for a variety of battery pack applications such as 10-17 strings of ternary lithium or lithium iron phosphate.
 
CT3901
The CT3901 is designed to drive 40V~150V VGaNTM, E-type bidirectional GaN HEMT with a single gate and dual drain for low-voltage side battery protection in BMS systems. With its powerful driving capabilities, the CT3901 can drive multiple VGaNTMs in parallel within 50uSec. The input of the CT3901 is compatible with AFE/MCU logic and can withstand input logic voltages up to 20V. CT3901 is a dedicated driver for CT-UNITE 40V~150V VGaNTM with a gate drive voltage of 5V. The CT3901 has fast opening and closing speeds that respond to fault conditions to protect the system.