CT20B15V100
BMS GaN
CT20B15V100
1.General description
100V bidirectional GaN enhanced HEMT. The gate terminal G and terminals D1/D2 both have a breakdown voltage of 100V and an operating current of 200A. GaN HEMT can be turned on by VGD1 voltage or VGD2 voltage.
2.Features
·Bi-directional blocking capability
·GaN E-mode HEMT technology
·Ultra-low on resistance
3.Applications
·BMS battery protection
·High side load switch in bi-directional converter
·Switch circuits in multiple power supplier system
4.Key performance parameters
Table 1 Key performance parameters at TJ = 25℃
Parameter | Value | Unit |
VDD, max | 100 | V |
RDD(on),max @ VG = 5 V | 1.7 | mΩ |
QG,typ @ VDD = 50V | 66 | nC |
ID, DC (TA=25°C) | 200 | A |
5.Pin information
Table 2 Pin information
Pin | Pin description | Pin function |
1 | Gate | Driver Gate |
2,4,6 | Drain1 | Power Drain1 |
3,5,7 | Drain2 | Power Drain2 |
Table 3 Ordering information
Type/Ordering Code | Package | Product Code |
CT20B15V100 | FCQFN 10×6 |