GaN E-MODE FET

CT1901

700V E-MODE GaN HEMT

Product Introduction

CT1901 devices are a series of high-performance and cost-effective enhanced GaN high electron mobility transistors (HEMTs). GaN is a third-generation semiconductor material with a wide bandgap and high power density. GaN HEMTs have the characteristics of small parasitic capacitance and no bulk diode. The reverse recovery charge is zero, which can significantly reduce switching losses.

The CT1901 device has a minimum drain source withstand voltage of 650V and has the advantages of low gate charge, low output charge, low switching loss, and no reverse recovery charge. The packaging separately leads out the source control pin SK, making the switch control more reliable and thus increasing the switching frequency. The CT1901 device is suitable for various power switch designs, especially for ultra-high frequency switch power supply designs.

Product Features

★ Enhanced high electron mobility transistor

★ Low switching loss

★ Low gate charge, low output charge

★ No reverse recovery charge

★ Suitable for ultra-high frequency switches

★ Low gate driving voltage

★ Low conduction impedance

Application field

★ ACDC switching power converters such as AHB/LLC/QR flyback

★ High voltage DCDC converter

★ PFC

★ LED driver

★ Fast charging of batteries

★ Various adapters

Technical configuration and performance

产品图片