RMC
Released the world's first dedicated cerebellar chip solution that constrains AI model physical quantity outputs, with perception → decision → execution delay under 5ms, high-frequency neural reflexes exceeding 250Hz, and motion control models winning second and third prizes at the ICCV International AI Competition, and the CVPR International AI Vision and Tactile Championship in 2024.
Agt-ACT
The intelligent joint chip is equipped with a built-in FOC algorithm, using motor field-oriented control technology implemented through analog circuits. It has no operating system and operates at temperatures below 170°C. We achieved integration of 5,000 HEMT devices on a GaN two-dimensional electron device, with an operating temperature below 250°C. The joint motor driver chip integrates six HEMTs on a single chip, offering higher efficiency and smaller size.
RDP
Gallium Nitride (GaN) low-impedance, high electron mobility gallium integrated circuit 'digital power chip solution,' with built-in high-precision SOC, SOH, SOP AI electron mobility estimation algorithms. It is mainly used in aerospace, space robotics, smart equipment, digital inverters, new energy vehicles, new energy battery BMS management, safe charging, and other scenarios.
RDL
Gallium Nitride (GaN) millimeter-wave and millimeter-wave high electron mobility (PHEMT) amplifier and Transceiver chip solutions, mainly used in applications such as drones, robots, intelligent equipment, air-to-ground communication, space networking, and electronic countermeasures in complex electromagnetic environments.

RDL

CT9002B系列

13 × 15 × 2.1mm

Interface: SDIO3.0 × 1

(5.8G or 2.4G RF)

UART × 1 (GNSS/BT)



 
CT-9004A

17mm × 17mm × 2.1mm

Interface: SDIO3.0 × 1; UART × 1;



 
CT9004B系列

17×17×2.1mm 

TXPOWER: 23dbm~30.5dbm

(Optional)

Frequency band: 2.3GHz~6GHz



 
CT-6GP33

Frequency: 2GHz~6GHz; Power: 33dBm

Voltage: 28V; Gain: 22dB; Current: 0.65A;

Size: 7.8 × four point eight × 3mm

Support LNA_ EN, PA_ EN, Vc1



 
CT-6GP37

Frequency: 2GHz~6GHz; Power: 37dBm

Voltage: 28V; Gain: 22dB; Current: 0.65A;

Size: 7.8 × four point eight × 3mm

Support LNA_ EN, PA_ EN, Vc1



 
CT661

Frequency: 2GHz~6GHz; Power: 45dBm

Voltage: 28V; Gain: 21dB Current: 3.5A;

Size: 7.8 × four point eight × 3mm

Support LNA_ EN, PA_ EN, Vc1



 
CT761

Sub 1G 6W PA

Packaging: QFN8x8-56

BW：300-550MHz

Gain (dB)：  37@433MHz



 
CT80D-01

Size: 13 x 15 x 2.1mm

TX POWER=33 dBm

Communication delay less than 5ms

RF bandwidth: 1/2/4/8 MHz


 
CT-9005 series

Size: 13 x 15 x 2.1mm

Transmission rate: 2Mbps, 4Mbps, 500Kbps, 100Kbps

Sensitivity: 5.8G: -91dbm @ 4Mbps, -93dbm@2Mbps ；

Sub1G:  -88dbm@2Mbps ,-96dbm @500Kbps



 
CT-83005

CT-83005 is a high-efficiency, DPD friendly, three-stage HBT universal power amplifier with operating frequencies ranging from 5100MHz to 5925MHz. Under typical 5V power supply conditions, the average output power can reach 28dBm and the peak power can reach 36dBm. The internal input and output impedance of the chip has been matched to 50 Ω, with on-chip power amplifier enable controller and temperature compensation circuit. Adopting advanced packaging, it has the characteristics of low cost and high reliability. Widely used in various high transmission rate application scenarios.


 
CT-83059

CT-83059 is a linear power amplifier with an operating frequency of 4900MHz~5925MHz, using a typical 5V operating voltage and a static current of 215mA. The input and output impedances inside the chip have been matched to 50 Ω. Adopting standard green lead-free advanced packaging, it has the characteristics of low cost and high reliability. Widely used in various high transmission rate application scenarios.