In order to deeply study and implement the spirit of the Third Plenary Session of the 20th CPC Central Committee, promote the deep integration of scientific and technological innovation and industrial innovation, and promote the landing and transformation of scientific and technological achievements of the Chinese Academy of Sciences in Guangxi, the Department of Science and Technology of Guangxi Zhuang Autonomous Region, together with the Chinese Academy of Sciences Guangzhou Branch, held the "China Science and Technology Eight Guangxi · Creating the Future: Chinese Academy of Sciences 100 Major Scientific and Technological Achievements into Guangxi Transformation Activity" in Nanning International Convention and Exhibition Center, and set up a two-way high-speed channel for the transformation of scientific and technological achievements.

This activity focused on 65 scientific and technological achievements of the Chinese Academy of Sciences, 120 major scientific and technological achievements of the autonomous region, and 89 key popular science achievements. It focused on the major scientific and technological achievements of the Chinese Academy of Sciences in basic research, key core technology research, achievement transformation, and the implementation effect of the "cutting-edge" action in science and technology in Guangxi. The scientific and technological achievements were presented in the form of popular science, and the latest trends in the integration and development of scientific and technological innovation and industrial innovation were closely felt and experienced.

CT Unit Wireless Semiconductor, based on gallium nitride materials, has been deeply involved in the research and development of robot power system chips and process manufacturing, and has been invited to be an exhibitor in this event. Zhongke Blue Valley Semiconductor (Guangxi) Co., Ltd. is a wholly-owned subsidiary of Zhongke (Shenzhen) Wireless Semiconductor Co., Ltd. The company plans to build a third-generation semiconductor wafer production line in Guangxi.

The company is showcasing its unique process AI ASIC technology chip based on compound gallium nitride (GaN) material, which is professionally applied in the field of artificial intelligence power systems. To solve the widely existing performance constraints in the power system of embodied robots at present, especially in terms of delay, heat management, and energy efficiency, this chip adopts a half bridge topology array GaN HEMT device to reduce the volume of the half bridge drive circuit and achieve the goal of small volume and large energy. The chip achieves a switching frequency of over 1MHz and an energy conversion efficiency of over 98.5%, which is a 40% improvement compared to traditional Si based solutions. At the same time, the temperature rise Δ T ≤ 25K @ full load further enhances the stability and reliability of the system. It is a power system chip specially designed for actuators and motor drives on the joints of embodied robots, industrial robots, and medical robots. It reduces the development cost of multiple platforms for customers, achieves seamless integration from "fully integrated" to "scalable", and meets the differentiated needs of industrial automation, new energy equipment, and embodied intelligence fields.

The team relies on independent intellectual property rights of gallium nitride materials and characteristic GaN array integrated chip process technology, especially in the research and development of gallium nitride epitaxial doping technology and silicon-based embedded gallium nitride manufacturing process, continuously making breakthroughs. The company's "embodied robot power system series chips" cover software and hardware collaborative design and core device processes. This chip is designed for joint actuators and motor drivers, cerebellar controllers, electronic skin, simulated muscles, and IMU physical model attitude and motion control technology in application scenarios such as embodied robots, industrial robots, and medical robots.