Zhongke Semiconductor's gallium nitride robot joint chip was officially commercialized
Release time：2025-05-30 18:13:35
Zhongke Wireless Semiconductor Co., Ltd. has officially launched and commercialized a robot joint ASIC driver chip based on gallium nitride (GaN) HEMT technology, which is also one of the "Robot Joint Driver Chip Series" in Zhongke Semiconductor's robot power system chip family. This series of chips exhibits more stable performance in high-temperature environments, with smaller volume, higher conversion efficiency, and lower switching losses, effectively reducing thermal management requirements and improving system compactness. Facilitating the modular design of robot joints for high efficiency and small size, reducing the weight of the robot to improve its motion posture stability. Widely used in high-power density scenarios such as industrial robots and medical robots, especially in the fields of embodied robot drive systems and servo motor control, it has shown broad application prospects.
The official commercial model released this time is (CT-1906) LGA package integrated with 6 GaN HEMTs (three-phase half bridge topology) and 3 independent drivers, supporting 80V continuous voltage/100V transient voltage, 60A continuous current output, and 5MHz switching frequency. Simultaneously launching the CT-1904 and CT-1902 series, through unified device specifications (GaN FET performance, packaging process) and hierarchical integration strategy, reducing customer multi platform development costs, achieving seamless transition from "fully integrated" to "scalable", and meeting differentiated needs in industrial automation, new energy equipment, and embodied intelligence fields.
Technical advantages
High integration, high reliability, low power consumption, comprehensive protection mechanism, as well as excellent dynamic response and electromagnetic compatibility. By adopting a half bridge topology array GaN HEMT device, the volume of the half bridge driving circuit is significantly reduced, achieving small volume and high energy, making it the preferred choice for driving small-sized, high-power density motors. Realize switch frequency above 1MHz, 98.5% energy conversion efficiency (40% higher than traditional Si based solutions), temperature rise Δ T ≤ 25K @ full load.
parameter | CT-1906 | CT-1904 | CT-1902 |
Package Size | 10mm × 10mm LGA-16pin (compliant with JEDEC MS-034 standard) | 8mm × 8mm LGA-15pin (compliant with JEDEC MS-034 standard) | 5mm × 6.5mm LGA-30pin (compliant with JEDEC MS-034 standard) |
Integrated Device | 6 * GaN HEMT+3 * Half Bridge Driver | 6*GaN HEMT | 2 * GaN HEMT+1 * Half Bridge Driver |
Typical application power consumption | 13W (@ 48V, 50% duty cycle) | 13W (excluding external drive) | 12.5W@48V , 50% duty cycle) |
System development complexity | Low (fully integrated) | Medium (requiring topology design) | Low cost |
Electrical characteristics | -Working voltage: 12V~80V (continuous)/100V (transient, ≤ 100ms) -Single channel output current: 60A (continuous, Ta=25 ° C)/230A (pulse, 100 μ s) -On resistance (RDS (on)): 3.5m Ω (maximum value, @ VGS=5V, ID=25A, TJ=25 ° C) | -Working voltage: 12V~80V (continuous)/100V (transient, ≤ 100ms) -Single channel output current: 60A (continuous, Ta=25 ° C)/230A (pulse, 100 μ s) -On resistance (RDS (on)): 3.5m Ω (maximum value, @ VGS=5V, ID=25A, TJ=25 ° C) | -Working voltage: 12V~80V (continuous)/100V (transient, ≤ 100ms) -Single channel output current: 60A (continuous, Ta=25 ° C)/230A (pulse, 100 μ s) -On resistance (RDS (on)): 3.5m Ω (maximum value, @ VGS=5V, ID=25A, TJ=25 ° C) |
dynamics | -Switching frequency range: 0-5MHz (full temperature range) - Gate drive rise/fall time: 10ns/3ns (typical value, TJ=25 ° C) | -Switching frequency range: 0-5MHz (full temperature range) -Gate drive rise/fall time: 10ns/3ns (typical value, TJ=25 ° C) | -Switching frequency range: 0-5MHz (full temperature range) -Gate drive rise/fall time: 10ns/3ns (typical value, TJ=25 ° C) |
Protection function | - OTP：过温保护165度，过温恢复145度 ESD保护：人体模式 1000V 器件放电模式1000V | - | - OTP：过温保护165度，过温恢复145度 ESD保护：人体模式 1000V 器件放电模式1000V |
thermal resistance | Connected to the environment: θ JA=59 ° C/W Connected to substrate: θ JC=4.0 ° C/W | Connected to the environment: JA=59 ° C/W Connected to substrate: JC=4.0 ° C/W | Connected to the environment: θ JA=59 ° C/W Connected to substrate: θ JC=4.1 ° C/W |
Environmental adaptability | Working temperature: -40 ° C~+125 ° C (junction temperature) | Working temperature: -40 ° C~+125 ° C (junction temperature) | Working temperature: -40 ° C~+125 ° C (junction temperature) |
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