CT10B30V100
GaN-enhanced HEMT
CT10B030
1.General description
100V Bi-directional GaN enhancement mode HEMT. The gate terminal G and terminals D1/D2 all have a breakdown voltage of 100V.The GaN HEMT can be turned on by either the VGD1 voltage or the VGD2 voltage.
2.Features
·Bi-directional blocking capability
·GaN E-mode HEMT technology
·Ultra-low on resistance
3.Applications
·BMS battery protection
·High side load switch in bi-directional converter
·Switch circuits in multiple power supplier system
4.Key performance parameters
Table 1 Key performance parameters at TJ = 25 °C
Parameter | Value | Unit |
VDD, max | 100 | V |
RDD(on),max @ VG = 5 V | 3.3 | mΩ |
QG,typ @ VDD = 50V | 66 | nC |
ID, DC (TA=25°C) | 100 | A |
5.Pin information
Table 2 Pin information
Pin | Pin description | Pin function |
1 | Gate | Driver Gate |
2,4,6 | Drain1 | Power Drain1 |
3,5,7 | Drain2 | Power Drain2 |
Table 3 Ordering information
Type/Ordering Code | Package | Product Code |
CT10B030 | FCQFN 5X6 |