Robot power chip

CT1906

100V Three-phase enhanced GaN half-bridge chip.

 1.Description 

CT-1906 V1.1 is a 100V, 60A three-phase enhanced gallium nitride half-bridge chip,featuring a 10×10mm LGA package. This package integrates 6 High-performance HEMT devices and 3 driver chips, making it the most compact and efficient GaN solution in the industry.

The CT-1906 V1.1 provides six logic inputs for controlling the high-side and low-side GaN FETs for maximum flexibility. The split driver outputs allow for independent adjustment of turn-on and turn-off strengths, optimizing both EMI and efficiency.

Comprehensive fault protection is built into the CT-1906 V1.1, including active bootstrap voltage control to prevent overcharge and ensure stable gate drive voltage, independent undervoltage and overvoltage protection for both VCC5V, and over temperature protection.

 With fast propagation delay, excellent delay matching, superior dv/dt immunity, and ultra-low in-package parasitic inductance loop, the CT-1906 V1.1 enables designers to achieve substantial improvement in power density and efficiency.

 2.Features 

★ Three-phase×3.5mΩ Half-Bridge GaN FETs with Gate Driver

★ 80V Continuous, 100V Transient Voltage Rating

★ Capable of up to 5MHz Switching

★ Independent High-Side and Low-Side PWM Inputs

★ Fast Propagation Delay (14ns Typical)

★ Excellent Delay Matching (1ns Typical)

★ Internal Strong and Smart Bootstrap Switch

★ Built-In UVLO, OVLO, OTP Protections

★ 105μA Low VCC5V Quiescent Current

★ High dv/dt Immunity up to 50V/ns

★ Adjustable Turn-on Speeds

 3.Applications 

★ Motor Drive Applications

 4.Pin information 

LGA 10×10mm package

5.Product Application

CT-UNITE (SHEN ZHEN) WIRELESS SEMICONDUCTOR CO., LTD

Tel :86-755-86630017 Fax :86-755-86630076

E-mail: sales1@ctunite.com          www.ctunite.com 

308-312, 3rd Floor, Building Jin(J), Design Industrial Park, No. 3838 Nanshan Avenue, Nanshan District, Shenzhen, Guangdong, China

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