RMC

Released the world's first dedicated cerebellar chip solution that constrains AI model physical quantity outputs, with perception → decision → execution delay under 5ms, high-frequency neural reflexes exceeding 250Hz, and motion control models winning second and third prizes at the ICCV International AI Competition, and the CVPR International AI Vision and Tactile Championship in 2024.

Agt-ACT

The intelligent joint chip is equipped with a built-in FOC algorithm, using motor field-oriented control technology implemented through analog circuits. It has no operating system and operates at temperatures below 170°C. We achieved integration of 5,000 HEMT devices on a GaN two-dimensional electron device, with an operating temperature below 250°C. The joint motor driver chip integrates six HEMTs on a single chip, offering higher efficiency and smaller size.

RDP

Gallium Nitride (GaN) low-impedance, high electron mobility gallium integrated circuit 'digital power chip solution,' with built-in high-precision SOC, SOH, SOP AI electron mobility estimation algorithms. It is mainly used in aerospace, space robotics, smart equipment, digital inverters, new energy vehicles, new energy battery BMS management, safe charging, and other scenarios.

RDL

Gallium Nitride (GaN) millimeter-wave and millimeter-wave high electron mobility (PHEMT) amplifier and Transceiver chip solutions, mainly used in applications such as drones, robots, intelligent equipment, air-to-ground communication, space networking, and electronic countermeasures in complex electromagnetic environments.